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This paper analyzes the sub-10 nm ultra-scaled Si1−xGex fin field-effect transistor (FinFET) and gate-all-around transistor (GAAFET), based on an improved method by combining Slater partial occupation and ab initio density functional theory (DFT). Compared to the existing generalized gradient approximation (GGA) DFT, which is computationally efficient but inaccurate, and the established hybrid functional...
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