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We have succeeded in utilizing In–Ga–Zn–O (IGZO) thin-film devices as synapse elements in a neural network. The electrical conductance is regarded as the connection strength, and the continuous change by flowing electrical current is employed as the connection plasticity based on the modified Hebbian learning as a learning rule. We developed a cellular neural network using the IGZO thin-film devices...
We have developed a planar device using In-Ga-Zn-O (IGZO) semiconductor for synapse element in neural network. First, we formed the planar device on a glass substrate. Next, we formed it on an LSI wafer. Both devices shows proper uniformities of film thicknesses and sufficient degradations of electric characteristics, which can be utilized for modified Hebbian learning proposed by us. These results...
We have developed a cross-point device using In-Ga-Zn-O (IGZO) semiconductor for synapse element in neural network. Horizontal 80 and vertical 80 metal lines make 6400 cross-point synapse integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning.
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