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Microwave assisted heating technology has become a popular alternative to conventional heating technologies with the characteristics of selectivity, instantaneity, integrity, safety, environmental friendliness and efficient energy-saving. Microwave absorption characteristics of material are critical because it provides an important index of utilization efficiency of microwave energy. However, a debate...
We will present a novel approach for improving solar water splitting with plasmonic photocatalysts, which relies on the exploitation of resonant cavity modes. Details about the electromagnetic design and experimental validation of this concept will be provided. Our findings show a possible route for efficiently designing photocatalysts that are active in the full solar range.
By solving the Schrödinger and Poisson equations self-consistently for AlGaN/GaN QWs, we calculate the intersubband optical absorption coefficients for QWs with various well thicknesses. By increasing the well thickness, the amplitude of the dipole matrix increases slowly. However, the decrease of the energy separation results in the red-shift of the resonant absorption peak and the decrease of the...
We experimentally demonstrate a new coherent absorption phenomenon, through which a planar photonic metamaterial may resonantly absorb 100% of incident light. The effect is a time-reversed analogue ‘Lasing Spaser’ action.
We present a detailed theoretical study of terahertz (THz) optical absorption in bilayer graphene. Considering an air/graphene/dielectric-wafer system, we find that there is an absorption window in the range 3 ~ 30 THz. Such an absorption window is induced by different transition energies required for inter- and intra-band optical absorption in the presence of the Pauli blockade effect. As a result,...
We theoretically demonstrate that it is possible to realize terahertz (THz) fundamental band-gap in InAs/GaSb type-II superlattices (SLs). The presence of such THz band-gap can result in a strong cut-off of optical absorption at THz bandwidth for relatively high-temperatures. This study is pertinent to the application of InAs/GaSb type-II SLs as optoelectronic devices such as THz photodetectors.
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