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We report the formation of smooth and conformal copper seed layer for electrodeposition by atomic layer deposition (ALD) and reducing anneal of a copper nitride film. The ALD copper nitride film was prepared at 100–140°C using bis(1-dimethylamino-2-methyl-2-butoxy)copper(II) and NH 3 , and reduced to metallic copper film by annealing at 200°C or higher temperatures. The growth rate of ALD...
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