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This paper investigates sub-synchronous resonance (SSR) phenomena inside a doubly-fed induction generator (DFIG) based wind farm, considering the impact of the spatial distribution of wind speed. Firstly, the impedance model of a one-DFIG aggregated model based wind farm is presented to analyze the induction generator effect. Then, a two-DFIGs aggregated impedance model, considering DFIGs in both...
Epoxy-based nanocomposites working in the irradiation environment could be exposed to a great risk of degradation induced by partial discharge. It is then of necessity to investigate the effect of irradiation on the resistance to partial discharge of epoxy nanocomposites. In this paper, epoxy/Al2O3 nanocomposites have been prepared to estimate the influence of electron beam on the erosion of partial...
A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy...
In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I-V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM.
Based on the retention failure mechanism of high resistance state due to reconstruction of oxygen vacancy filament in the rupture region, a physical model is proposed to quantify the retention failure behavior of oxide-based RRAM devices, supported by experiments. A new data retention evaluation methodology is proposed to predict the failure probability and lifetime of the memory devices.
Based on the new finding on switching behavior, for the first time a new memory operation principle is proposed to control the switching and to achieve improved performance of oxide-based RRAM including device-to-device and cycle-to-cycle uniformity, RESET current, and window of RHRS/RLRS ratio. Furthermore, a numerical simulation method is developed to evaluate the validity of the new operation principle...
A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance...
Accurate measurement of contact resistance is crucial for advanced nanometer CMOS processes. An equally important requirement is to measure contact resistances in the same micro-environment as the device-under-test (DUT) will be used in real designs. With complicated interactions among various layout shapes in nanometer CMOS processes, test structures with adequate scalability is needed. In this paper...
A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI...
A 300-mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias (TSVs) and hybrid Cu/adhesive wafer bonding is demonstrated. The W TSVs have fine pitch (5 mum), small critical dimension (1.5 mum), and high aspect ratio (17:1). A hybrid Cu/adhesive bonding approach, also called transfer-join (TJ) method, is used to interconnect the TSVs to a Cu BEOL in a bottom...
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