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A round-robin study of arsenic depth profiling was conducted by Japanese SIMS users using arsenic-implanted silicon specimens with doses of 3x10 14 to 3x10 16 ions/cm 2 . The peak concentration of the implanted arsenic was about 11at.% for the specimen with the dose of 3x10 16 ions/cm 2 . The shape of arsenic ion (AsSi - and As - ...
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