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The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm2 to collect the charge from a 4 mCi/cm263Ni source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed. A prototype of this...
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