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The Schottky barrier is a fundamental issue when an n‐type transparent conductive oxide (TCO) is contacted with p‐type hydrogenated amorphous silicon (p‐a‐Si:H) in silicon heterojunction (SHJ) solar cells. Herein, it is found that the hydrogen (H) atoms in p‐a‐Si:H diffuse into tungsten‐doped indium oxide (IWO) during annealing, which improves the electric properties of both the IWO films and the...
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