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A novel method to fabricate microchannels into fused silica capillaries and hollow fibres by a high-voltage high-frequency corona discharge induced by a Tesla coil is demonstrated. Channels as narrow as 2.2 μm are successfully made in capillaries with 2 μm inner and 125 µm outer diameters.
Silicon Rich Oxide (SRO) is a multiphase material composed by SiO2, Si and SiOx.(0<X<2) SRO characteristics include the photo and cathode emission of visible light. Lastly, big efforts have been devoted to obtain a controllable emission using electroluminescence, but keeping its compatibility with silicon IC's fabrication technology. In this paper, electroluminescent properties of PolySi/SRO/Si...
Photoluminescence and Cathodoluminescence of hydrogenated Silicon Rich Oxide (SRO:H) films were studied. The samples were prepared by Low Pressure Chemical Vapor Deposition (LPCVD) on Si substrates, some samples were thermally annealed at high temperature and hydrogenation was made by low temperature annealing in forming gas. Strong red PL (Photoluminescence) and CL (Cathodoluminescence) in almost...
Cathodoluminescence (CL) spectra for Silicon Rich Oxide (SRO) films with different silicon excess and nitrogen content are measured at room temperature. The SRO was deposited by Low Pressure Chemical Vapor Deposition (LPCVD) on Si substrates, and nitrogen was introduced into SRO adding NH3 to the reactive gases. The samples were divided in two parts, one part was annealed at 1100degC. The nitrogen...
Si nanocrystals are promising materials which can be used for optical sensor, memory devices and future optoelectronics devices. In this work we study the morphology surface and interface of the silicon rich oxide (SRO) films with different nanocrystals (nc-Si) embedded in a thin SiO2 matrix (Silicon excess). Also the surface roughness after annealing was investigated by means of Atomic Force Microscopy...
Different amounts of oxygen involved boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (muc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH4), hydrogen (H 2), oxygen (O2), and diluted diborane (B2 H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature...
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