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In this work, we report the dependence of optimum value of field plate parameters, viz., overlap length and dielectric thickness, on dielectric constant of field-plate dielectric in a 1900V, Ni/4H-SiC Schottky diode. Field plate overlap length and dielectric thickness are optimized for different device processing-compatible dielectric materials: SiO2, Si3N4, Al2O3 and HfO2. The results show that the...
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