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We report for the first time a new process technology for boosting the Ge content in SiGe source/drain (S/D) stressors to increase strain and performance levels in p-FETs. By laser-induced local melting and inter-mixing of an amorphous Ge layer with an underlying Si0.8Ge0.2 S/D region, a graded SiGe S/D stressor is formed upon recrystallization. Peak Ge content in the graded SiGe S/D is doubled over...
We report the first demonstration of a novel germanium-enrichment process for forming a silicon-germanium (SiGe) source/drain (S/D) stressor with a high Ge content. The process involves laser-induced local melting and intermixing of a Ge layer with an underlying Si0.8Ge0.2 S/D region, leading to a graded SiGe S/D stressor with a significant increase in the peak Ge content. Various laser fluences were...
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