The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nano-metal/semiconductor junction dependent porosification of silicon has been studied here. The silicon nanostructures (SiNSs) have been textured on n- and p- type silicon wafers using Ag (silver) and Au (gold) metal nano particles induced chemical etching. The combinations of n-silicon/Ag as well as p-silicon/Au form ohmic contact and result in the same texturization on the silicon surface on porosification,...
Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior...
A qualitative evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is discussed here for application in low dimensional semiconductors. The step-by-step evolution reported here is based on the phonon confinement model which is successfully used in literature to explain the asymmetric Raman line-shape from semiconductor nanostructures. Physical significance of different...
Silicon nanocrystals were produced using a two-stage gold ion implantation technique. The first stage implantation using low energy ions led to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the second stage was found to produce strained Si NCs. An annealing step at a temperature as low as 500 °C was seen to result in strain free NCs. Higher temperature annealing...
A study was done to determine the effect of physical, mechanical, thermal and three body abrasive wear response of Silicon Carbide (SiC) filled Glass Fiber Reinforced Epoxy (GFRE) composites. The main purpose was to study the influence of different weight percentages (wt.%) of SiC filler in addition to that of glass fiber. A three body abrasive wear analysis was conducted by varying different factors...
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B+) and phosphorous (P+) ions. Different samples, prepared by varying the ion dose in the range 1014–5 × 1015 and ion energy in the range 150–350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B+ implanted...
Raman spectroscopy of silicon nanostructures, recorded using an excitation laser power density of 1.0 kW/cm2 , was employed here to reveal the dominance of thermal effects at temperatures higher than room temperature. The room temperature Raman spectrum showed only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures showed an increase in FWHM and a decrease in asymmetry...
Multiwalled carbon nanotubes (MWCNTs) have been coated with silicon carbide (SiC) using polycarbosilane as precursor in order to improve their thermo oxidative stability. The polycarbosilane coated MWCNTs were heated to ~1300°C under an inert atmosphere to generate the SiC coating. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have confirmed the formation of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.