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Thin body III-V-on-insulator (III-V-OI) structure is a promising device structure for future node transistors in CMOS technology. Typically, a direct wafer bonding (DWB) is used to fabricate III-V-OI on a Si substrate [1–3]. Donor wafers were etched out [1, 2] or separated by hydrogen implantation [3]. However, the former one is extremely costly and the latter one can induce the residual defects in...
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