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The carrier dynamics of vertically aligned InAs/GaAsSb Type‐II quantum dot (QD) structure are comprehensively analyzed by time‐resolved photoluminescence (TRPL) in this study. A columnar InAs QD structure with an overgrown layer of GaAsSb is proposed to enhance the thermal stability and carrier lifetime through the Type‐II energy band alignment and carrier tunneling effect. The carrier lifetimes of...
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