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Gallium nitride (GaN) nanorods were grown on Al 2 O 3 (0001) substrates at 500°C by hydride vapor phase epitaxy (HVPE) and their structural and optical properties were improved by e-beam annealing. After e-beam annealing for 4h by applying an acceleration energy of 30keV, cathodoluminescence peak positions for the single nanorod and the grouped nanorods were shifted toward lower energy...
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