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Nanostructured zirconium (Zr)-doped vanadium oxide (VOx) films were prepared at low temperature on glass substrates by reactive direct current magnetron sputtering followed by in-situ annealing process. The effect of Zr content on the chemical composition, structure, morphology and metal–semiconductor transition properties of the deposited films was investigated systematically. It was found that Zr...
Grain size of vanadium dioxide (VO 2 ) films or isolated particles is known to play an important role in the modulation of temperature dependence of the hysteresis width in semiconductor to metal transition. In order to investigate the effect of grain size on the hysteresis width, we prepare a range of VO 2 films consisting of spheroidal nanoparticles whose mean size was hugely modulated...
Vanadium dioxide (VO 2 ) films with large phase-transition hysteresis loops were fabricated on glass substrates by reactive direct current (DC) magnetron sputtering in Ar/O 2 atmosphere and subsequent in situ annealing process in pure oxygen. The crystal structure, chemical composition, morphology and metal-insulator transition (MIT) properties of the deposited films were investigated...
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