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We present our results on the role of Si or Al interface layers on the structure and electrical properties of tantalum and molybdenum contacts to p-type 6H-SiC. Thin films of Ta or Mo were deposited on p-type SiC with and without p-doped Si or Al interface layers. The Ta/p-SiC, Ta/p-Si/p-SiC, Ta/Al/p-SiC, Mo/p-SiC, and Mo/Al/p-SiC structures were annealed at high temperatures up to 1200°C using the...
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