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The plasma doping technique offers unique advantages over conventional beam line systems, including system simplification, lower cost, higher throughput, and device performance equivalence or improvement. Plasma doping has been first used on 68 nm CMOS device source and drain formations. A PMOS device was doped by B2H5 plasma doping and an NMOS device was doped by AsH3 plasma doping. The devices fabricated...
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