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In this research, we propose a novel MEMS sensor based on Laterally Movable Gate Array Field Effect Transistor (LMGAFET) for the measurement of nN force. By designing an array structure and adopting reasonable parameters and utilizing modified MOS3 model, the sensor's proved to have high sensitivity of 0.107 mA/nN, low cross-axis sensitivity and excellent linearity. Besides, a modified MOS3 model...
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