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Mg 0.2 Zn 0.8 O thin films for resistance random access memory application were prepared on ITO glass substrates by sol–gel method, and the effect of annealing temperature on resistance switching behavior has been studied. With the increase of annealing temperature, the crystallinity of Mg 0.2 Zn 0.8 O thin films can be improved, the turn on voltage, the turn off voltage,...
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