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In this paper we report on the growth of silicon carbide nanowires deposited on silicon substrate with vapor phase technique at atmospheric pressure, using propane and silane as precursors and hydrogen as carrier gas.A thin layer of iron deposited on the silicon surface was used as catalyst.The morphology, crystal structure and details such as the growth direction of the as-prepared SiC NWs were characterized...
A new method has been developed to grow nickel-catalysed SiC nanowires on silicon, by a chemical reaction involving carbon tetrachloride as a single precursor. This produces long crystalline 3C–SiC nanowires with <111> axis, as verified by transmission electron microscopy. A broad optical emission centred at about 2eV is detected by cathodoluminescence spectroscopy. The Gaussian component at...
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