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We present a 1.0Mb pipeline 6T SRAM in 40nm Low-Power CMOS technology. The design employs a variation-tolerant Step-Up Word-Line (SUWL) to improve the Read Static Noise Margin (RSNM) without compromising the Read performance and Write-ability. The Write-ability is further enhanced by an Adaptive Data-Aware Write-Assist (ADAWA) scheme. The 1.0Mb test chip operates from 1.5V to 0.7V, with operating...
Voltage-dependent timing skews in precharge and sensing activities cause functional failure and reduce the speed of asynchronous SRAM. Data-dependent bitline leakage current further increases the timing skews and reduces the yield of asynchronous SRAM. A dual-mode self-timed (DMST) technique is developed for asynchronous SRAM to eliminate the timing-skew-induced failures and speed overhead across...
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