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Significant stress is induced in the crystalline Si area around a Cu-filled Through Silicon Via (TSV) due to the large mismatch in the co-efficient of thermal expansion (CTE) between Si and Cu. As a result, CMOS devices fabricated within the stressed Si region will show undesired variations in their electrical performance. This paper reports a novel method to isolate the TSV-induced stress from active...
Drop test reliability of the 20 mm × 20 mm RDL-first FOWLP on bottom and 8 mm × 8 mm WLCSP on top for Package on Package (PoP) test vehicle was validated by the experimental testing in this paper. The results show that the built up PoP test vehicle can pass 30 times of drop impact test and some samples can pass 200 times drop impact test with the loading of 1500 G/0.5 ms. The failure mechanisms of...
RDL first FOWLP with the advantages reducing die shift and wafer level warpage during the fabrication process has been developed. The drop impact reliability for the large size (20 mm×20 mm) RDL first FOWLP is one major concern for the mobile applications. Under drop test loading, crack and delamination failures may happen to the dielectrics layer and solder joints. In this paper, reliability of 20...
In this paper, the drop impact reliability of the 3D embedded wafer level package (eWLP) was studied by the experiment and finite element simulation. The drop impact reliability test of the 3D eWLP test vehicle was conducted under the loading of 1500 g within 0.5 ms. The failure mechanisms were identified through the failure analysis experiment. The experimental results show that the failure modes...
Reliability of the embedded ultrathin device in the organic substrate packaging is one of the major concerns during its applications. In this paper, drop impact tests were conducted to the embedded ultrathin stress sensor chip in the organic substrate. Stresses were monitored with the embedded stress sensor chip based on silicon piezoresistive effects. Dynamic explicit finite element model with the...
As a newly lighting source, high power white light emitting diodes (LEDs) have many excellent performances and begin to be widely used. The LED street light fixture is one of the most typical and popular applications, which is studied and developed worldwide. However, those studies mainly focused on its light efficiency, light pattern, color temperature, and so on, few concentrated on the reliability...
Transient responses of 3D stacked-die package with through silicon via (TSV) structure under board level drop test load following the JEDEC standard are investigated using the Input-G finite element simulation method. In order to reduce the finite element mesh size the stacked-die package under investigation is modeled with details while the others are simplified as blocks with equivalent material...
A finite element model which includes electromigration, thermomigration, stress migration and concentration diffusion is established to study the mass diffusion phenomenon. Numerical experiment is carried out to obtain the electrical, thermal, stress and atomic concentration fields of the sweat and through silicon via (TSV) structure under high current density load. The effectiveness of the electromigration...
In this paper, the wire bonding process of high power light emitting diodes (LED), which was simplified to consist of impact and vibration stages, was investigated by using a nonlinear finite element method. Parametric studies were carried out to examine the effects of the ultrasonic vibration amplitude, the friction coefficient between the free air ball (FAB) and bond pad, the incline of LED chip...
Undesired thermal residual stresses and strains always exist in GaN epitaxial film after the process of metal organic chemical vapor deposition (MOCVD) due to difference in thermal expansion coefficients between the silicon substrate and epitaxial layer. These stresses would mostly result in defects such as dislocations, surface roughness, and even cracks in epitaxial layer preventing further device...
Due to large mismatch in coefficients of thermal expansion between the copper via and the silicon of Through Silicon Via(TSV), significant thermal stresses will be induced at the interfaces of copper/dielectric layer (usually SiO2) and dielectric layer/silicon when TSV structure is subjected to subsequent temperature loadings, which would influence the reliability and the electrical performance of...
Multi-physics multi-scale modeling issues in various stages of the LED manufacturing, 3D-SiP, and nano interconnects have been discussed. Molecular dynamics (MD) and finite element method (FEM) have been used to study the scale effect of the material properties and the prediction of the module behaviors which are critical to LED fabrication. We propose a new concept to integrate multi-physics/multi-scale...
A multi-physics multi-scale modeling platform has been developed and it has been applied to various stages of the LED manufacturing such as MOCVD reactor design, epitaxial growth based on silicon wafer, chip design and manufacturing, module packaging and assembly, and specific lamps. Discussions are also given to the ultra-scalable reactor design, material constitutive modeling, and curvature evolution...
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