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In this paper, a new write assist technique is proposed to improve the write characteristics of 1T-1MTJ STT-RAM bitcell through a symmetric write operation. This is done by applying a negative voltage to the bitline during write ‘1’ operation. The proposed technique is compared with the best previously proposed techniques. The simulation results using 65nm CMOS technology show that the proposed write...
Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive candidate for future non-volatile memories. However, the write operation in 1T-1MTJ STT-RAM bit-cells is asymmetric and stochastic which leads to high energy consumption and long latency. In this paper, a new write assist technique is proposed to terminate the write operation immediately after switching takes place in...
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