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A deep learning processor with 8 gated recurrent neural network (RNN) accelerators is proposed in this paper. It features on-chip incremental learning by numerical and local gradient computation enhancement. Extra precision of training is obtained without extending the bit-width. Tri-mode weight access (DMA/FIFO/RAM) improves the throughput during incremental learning. The number multipliers and activation...
In highly-scaled CMOS technologies, analog and digital functionality are often combined into more powerful systems. Implementation of any complex digital circuit requires digital synthesis and therefore a digital standard cell library. Absence of the digital libraries in core design kits provided by the foundries is a significant hurdle for academic institutions to design complex electronic systems...
On-chip electrostatic discharge (ESD) protection are required for all ICs. Unfortunately, ESD-induced parasitic capacitance (CESD) will seriously affect performance of high-speed and RF ICs. Careful design balance of ESD protection level and minimizing ESD-induced circuit performance degradation has become a major design challenge for high-speed and RF ICs. This paper presents a comprehensive study...
This paper discusses a systematic study of electrostatic discharge (ESD) protection circuit co-design and analysis technique for high-frequency and high-speed ICs in 28 nm CMOS. The comprehensive ESD-IC co-design flow includes ESD device optimization and characterization, ESD behavioral modeling, backend interconnect characterization, parasitic ESD parameter extraction, ESD failure analysis and ESD...
This paper reports a new scalable behavioral modeling technique for silicon controlled rectifier (SCR) based electrostatic discharge (ESD) protection structures using Verilog-A language. Accurate models were developed for various low-triggering voltage SCR ESD (LVSCR) protection structures implemented in a foundry 180nm RF process, which were validated by circuit simulation and ESD measurement.
A dual-mode, graphene optical modulator and detector for the near-IR is demonstrated in a single device. Gate dependent photocurrent and optical transmission allow the device to operate in a highly novel mode of simultaneous optical modulation and detection.
Design of single-pole multiple-throw (SPMT) Tx/Rx switch for RF FEM for multi-mode multi-frequency smartphones is challenging. SPMTs in SOI CMOS show comparable specs to those in GaAs due to unique SOI properties [1-3]. Hand-held devices require high ESD protection with more parasitic capacitance (CESD) that can severely degrade RF IC specs [4-6]. We recently designed the first highly-linearity SP10T...
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