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A silicon-based bilateral diode for fast neutron dose measurement is presented to take advantage of vertical and lateral current distributions and to achieve high uniform current distribution. The structure is designed to place rectangle and contacts on each side of the n-Si wafer. Diodes with different structure parameters are fabricated and the sensitivity to neutron dose is...
This paper investigated the plasma ashing damage to patterned porous low k structures with the objective to minimize the plasma damage by optimizing the low-k structural geometry and plasma chemistry. We first extended the plasma altered layer model to formulate the transport kinetics of the plasma process in patterned low-k structures. This enabled us to analyze the effects of the hardmask thickness,...
A plasma altered layer model was developed to characterize plasma damage in porous OSG (organosilicate glass) low-k dielectrics by taking into account the kinetics of radical diffusion, reaction, and recombination. A gap structure was designed to study plasma damage and validate the model. It consisted of two parallel rectangular Si spacers and a top optical mask to control the energy and intensity...
The model for description of one-dimensional anisotropic photonic crystals based on anisotropic porous silicon is proposed. The finite difference technique is applied for the scattering matrix parameter computation. Reflectance spectra for two orthogonal polarizations of the incident plane wave are calculated. The dependence of the shift of the spectral position of the photonic band gap edges on the...
This paper describes a biaxial-uniaxial hybridized strained CMOS technology achieved through selective uniaxial relaxation of thick SSOI, dual-stress nitride capping layer, and embedded SiGe source/drain. Through novel strain engineering, nFET/pFET Idsat enhancements as high as 27%/36% have been achieved for sub-40nm devices at 1V with 30% reduction in gate leakage current, while introducing minimum...
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