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In this paper, a 40 V versatile HV LDMOS technology with lower Rdson has been developed in the existing 0.18 mum LV CMOS process. The HV LDMOS are designed by using DOE concept on the simulation results from T-supreme followed by Medici. The process complexity to incorporate the HV kept as simple as possible which does not affect much due to baseline. DOE model are constructed from both the critical...
Rapid increasing demand towards high voltage MOSFETs device integrated in low voltage CMOS analog and digital circuits for automobile and power management application has driven the development of 0.18 um high voltage lateral diffused MOSFET (LDMOS) which capable to have 80 V breakdown voltage. During designing this high voltage LDMOS, it is observed that the device performance is very dependent towards...
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