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In order to research the influence of cathode module technology on photoemission of transmission-mode GaAs photocathode materials, high resolution X-ray diffraction (HRXRD) instrument was adopted to measure the HRXRD curves of transmission-mode GaAs materials and modules respectively. By comparison of the structures of reflection-mode and transmission-mode GaAs epilayers, both the cathode materials...
To research the influencing factors in the optical properties of Ga1-xAlxAs/GaAs photocathode, one uniform-doped sample was prepared with the GaAs thickness of 2.00 μm and the Be-doping concentration of 1×1019 cm-3, and two more exponential-doped samples were 2.00 μm and 1.60 μm in the thickness whose Be-doping concentration quasi-exponentially distributed ranging from 1×1018 cm-3 to 1×1019 cm-3....
In order to improve the cathode performance, an exponential-doping structure is applied to the preparation of transmission-mode GaAs photocathodes, in which a forward-directed induced electric field is formed to facilitate photoexcited electrons movement toward surface. To verify the actual effect of the exponential-doping structure, two types of transmission-mode GaAs photocathode samples were grown...
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