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Selective removal of the silicon underneath a set of single-turn multilayer interlaced stacked (SMIS) radio-frequency (RF) transformers with nearly perfect magnetic-coupling factor (kIM~1) and high resistive-coupling factor (kRe) is demonstrated. This process is based on the inductively coupled-plasma (ICP) deep trench technology. Improvement of 20.6 and 15.7 dB in isolation (S21) were achieved at...
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