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Experimental investigation of A-type and B-type guided modes was performed in GaN-based film-transferred photonic crystal light-emitting diodes. Good agreement with the band structure calculated in the limit of two-dimensional free photon was obtained.
The azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for light propagating in ΓX direction and 2.1 for ΓM direction.
We report fabrication of GaN-based two-dimensional surface emitting photonic-crystal lasers and successful demonstration of lasing action at room temperature with the emission wavelength at 424.3 nm and a low threshold pumping energy density of 3.5 mJ/cm2.
The azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for light propagating in GammaX direction and 2.1 for GammaM direction.
We report fabrication of GaN-based two-dimensional surface emitting photonic-crystal lasers and successful demonstration of lasing action at room temperature with the emission wavelength at 424.3 nm and a low threshold pumping energy density of 3.5 mJ/cm2.
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