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Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2Sb2TeB for phase-change memory ap plications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232°C. The activation energy...
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