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300nm SiO x layers grown on p-type (100) Si wafer have been annealed to form Si nanocrystals (NCs) within SiO 2 . 100nm ZnO films have been then deposited on top of the SiO 2 :Si NC layers and annealed to form hybrid structures of ZnO/Si NCs. The PL Si (photoluminescence from Si NCs) intensity of the hybrid structures increases almost linearly with decreasing size of...
Undoped ZnO films of 100 nm thickness have been deposited on p-type Si (100) substrates at room temperature by radio-frequency magnetron sputtering and subsequently annealed in a rapid thermal annealing apparatus under a nitrogen ambient by varying annealing temperature (T A ) from 973 to 1273 K in steps of 100 K for 3 min. Photoconductivity spectra in the UV and visible ranges are measured...
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