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Given low interface trap densities and low access resistances, InGaAs MOSFETs can provide greater on-state current than silicon MOSFETs at the same effective oxide thickness (EOT), and are thus strong candidates for use in VLSI.1 Transconductance as high as 2.1 mS/μm (Vds=0.5 V) with 115 mV/decade (Vds=0.5 V) subthreshold swing has been reported2 in planar III-V MOSFETs using a gate recess etch through...
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