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Large scale single-crystalline graphene was achieved on copper foils with CH4 as the precursor with a sandwich method. With a PMMA-assisted method, single-crystalline graphene was transferred to the marked SiO2/Si substrate. Quantum Hall devices will be fabricated by E-beam lithography and metallization. And, quantum Hall effect will be measured.
Wafer-scale monolayer graphene film was synthesized on Cu foils by chemical vapor deposition in a 3-in thermal furnace. Graphene film was transferred to the surface of SiO2 (300 nm)/Si substrates using a polymer-assisted method. Hall bar structures were fabricated by lithography and E-beam deposition for the electrical property measurement. Perfect symmetrical ohmic resistance distribution was achieved...
We report in CPEM 2012 the preparation of the micromechanical cleavage (MC) and the chemical vapor deposition (CVD) graphene films and the fabrication of the quantum Hall resistance (QHR) devices on these films. Graphene films are on the SiO2/Si substrates. Spectroscopic Raman analysis indicates monolayer graphene films are obtained. Hall bar structures are formed on graphene films by e-beam lithography,...
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