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The pure oxygen was introduced into the growth environment of the single crystal diamond with different contents, and the growth characteristics of single crystal diamond and the reaction dynamics in the plasma were studied in detail. As the ratio of O2 to H2 is up to 1.5%, the unique shaped etching pits with eight symmetric crystallographic planes appear. Optical emission spectra present typical...
The AlN based solidly mounted resonators utilizing the all-metal conductive Bragg reflectors have been demonstrated. The devices with different reflectors of Mo/Ti, W/Ti and AlN/Mo pairs have been fabricated and the frequency responses have been compared. The bottom electrode is incorporated into the conductive Bragg reflector, thereby reducing the parasitic resistance and the damping of the acoustic...
The influence of defects and impurities in polycrystalline aluminum nitride films on the violet and blue photoluminescence properties was investigated. The photoluminescence spectra show a broad emission band in the range from 380nm to 550nm, which consists of two components of the violet band centered at 400nm and the blue band centered at 480nm. When the native defects reduce and the crystal quality...
The plasma produced by the mixture of fluoride and argon (SF 6 /Ar) was applied for the dry etching of AlN films. Very high etching rate up to 140nm/min have been observed. The effects of the bias voltage and the plasma component on the etching results were investigated. It shows that AlN can be effectively etched by the plasma with the moderate SF 6 concentration and the etching rate...
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