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In this paper, we have demonstrated that cryogenic implantation applied to source and drain (SD) extension, pocket/halo and SD formation offers advantages for higher core and SRAM driving current and one order lower Ioff bulk (Ioffb) leakage in NMOS with reduced SRAM defectivity. Atomistic Kinetic Monte Carlo (KMC) modeling confirms that the cryo-implantation has enabled a unique control of active...
Strain techniques have been adopted and widely used in the advanced nodes since early 65nm for carrier mobility improvement. For PMOS, eSiGe incorporation in the SD is the process of choice to induce compressive strain in the channel for mobility improvement. To further lower the contact resistance, it is preferred to boost Boron concentration for pSD formed by eSiGe process. Normal implant process...
The Finemet alloy is used to make transformers for its excellent soft magnetic property. In order to study its distinctive character, it is essential to clarify the structural evolution mechanism especially in early nanocrystallization. The Fe73.5Si13.5B9Nb3Cu1 amorphous ribbons were prepared by single-roller melt-spinning process under argon atmosphere, and then annealed at 350??C, 380??C and 400??C...
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