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We reported an investigation of Si-based p-i-n photodetectors with a Ge0.92Sn0.08 active layer grown by molecular beam epitaxy on n-type Si (100) substrate. The spectral response at zero bias shows the cutoff wavelength extends to 2300nm. This work represents a promising technology to develop Si-based photodiodes for short-wave infrared detection.
The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.
An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10 ÷ 99% are considered. The regularities of ion implantation and metal plasma deposition for dielectric samples are theoretically and experimentally investigated...
An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10 ÷ 99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated...
Subwavelength-scale compound semiconductor lasers for chip-scale optical interconnects applications are discussed. Cylindrical metallodielectric cavities with two metal layers enable nanoscale physical dimensions and effective mode volumes at near-infrared emission wavelengths.
We present a highly efficient hybrid heterojunction photovoltaic (PV) cell with a colloidal inorganic nanocrystal (NC) electron donor and an organic electron acceptor. The heterojunction is formed by a thin film of cross-linked PbS NCs and a C60 layer. Compared to the PbS-only PV cell, the heterojunction device has improved the power conversion efficient (PCE) from 1.6 % to 2.2 %. The C60 layer effectively...
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