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In this work, we present the behavior of a graphene/silicon Schottky diode exposed to NH3 flow of few tens of parts-per-million (ppm), at standard temperature and humidity conditions. Graphene was synthesized by Liquid Phase Exfoliation and transferred onto the Silicon substrate by drop casting. The Schottky barrier characterization towards NH3 was performed at a reverse bias of −3V in the range 10...
We present a graphene/n-Si Schottky junction for NH3 detection at level of few tens of parts-per-million (ppm). Graphene was synthesized by Liquid Phase Exfoliation and transferred onto the Si by drop casting. The Schottky barrier characterization towards NH3 was performed by volt-amperometric measurements in the range 10-200ppm at bias of -3V. The characterization in the test chamber simulated environmental...
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