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Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp) 2 and NH 3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 µΩ cm and a low root-mean-square roughness at a growth temperature...
The properties for Ru/Ta and Ru/TaN bi-layer on Si substrate were investigated. The Ru, Ta and TaN films were deposited by ion beam sputtering technology and were annealed at temperatures ranging from 300 °C to 900 °C in high purity N 2 ambient. The phase formation, microstructure evolution and thermal stability for the Ru/Ta/Si and Ru/TaN/Si structures were investigated. Results show that...
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