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We study for the first time the effect of nanowire thicknesses and doping concentrations on the electrical characteristics of polycrystalline silicon nanowires to find out the proper combination of nanowire thickness and doping for sensitive operation of polycrystalline silicon nanowire biosensors. For nanowire thicknesses of 100 nm and 75 nm, a plausible subthreshold slope around 100 mV/dec for a...
We investigate the bias dependent modulation of the electrical characteristics of poly-silicon nanowire and perform a feasibility study of poly-silicon nanowire for biosensing application using liquid gate arrangement. Electrical characteristics of a 100 nm thick and 10 µm long p-type poly-silicon nanowire with a doping density of 1016/cm3 is investigated. For positive drain voltage application nanowire's...
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