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concretely aiming at the efficient millimeter-wave power generation for monolithically integrated design, the small-signal S-parameter characterization of the impact-ionization avalanche transit-time (IMPATT) diodes was presented in this work. By combining the measured S-parameter data both of the 40 × 2 µm2 IMPATT diode and different short ended coplanar waveguide (CPW) structures, a designing-by-characterizing...
A systematic characterization procedure of Silicon IMPATT (IMPact ionization Avalanche Transit-Time) diode is introduced in this work. DC characterization consists of currentvoltage (I-V) and capacity-voltage (C-V) measurements. RF small signal characterization is performed by the vector network analyzer (VNA). By combining the measured S-parameters of the 30x2 μm2 IMPATT diode and simulated data...
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