The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Antimony‐doped Ge‐LEDs were subjected to electroluminescence studies at temperatures about 300 K and 80 K. The LEDs were grown on Si substrates by MBE. The thickness of the active layer was 300 nm. For the p+nn+‐LEDs the Sb concentrations were 1 × 1018, 1 × 1019, 3 × 1019, 4 × 1019, 7 × 1019 or 1 × 1020 cm–3, respectively. As reference a p+in+‐LED without intentional doping in the active layer was...
The electroluminescence of vertically emitting Ge-on-Si light emitting diodes (LEDs) was investigated for tensile strain ranging from 0% to 0.24% and for heavy n-type doping ranging from 5×1017cm−3 to 1×1020cm−3. The tensile strain increased the electroluminescence of a Ge-on-Si pin LED by a factor of 2. For high n-type doping concentrations a distinct bandgap narrowing was observed and the electroluminescence...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.