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The diffusion behavior of hydrogen contained in the surface layer of oxynitrides serving as models for poly-Si/oxynitride interfaces in MOS transistors was studied with H depth profiling by nuclear reaction analysis. The poly-Si/oxynitride interface is found to contain mobile and stable H species. The mobile H species tends to desorb in vacuum at room temperature. A TDDB improvement caused by resting...
We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N2O gas, respectively. The N2O-oxynitride shows a stronger resistance against the approach of the SiO2/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates...
Influence of the atmosphere on ultra-thin oxynitride film was investigated for the precisely controlled plasma nitridation process. Some organic contaminant adsorb on the wafer before plasma nitridation process in clean room atmosphere. The adsorbed organic contaminant reduces the efficiency of plasma nitridation and increases the electrical thickness. The TDDB characteristic of ultra-thin oxynitride...
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