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We present electrical characterization of silicon nanowires made from ultrathin silicon-on-insulator (SOI) using a lithography process based on an atomic force microscope (AFM). SOI wafers were first thinned, prepatterned and doped using conventional microelectronics processes in order to elaborate contact leads and pads. Between contacts, the upper Si was further thinned down to 15nm and n-doped...
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