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VO X thin films were fabricated by the reactive e-beam evaporation method. By varying oxygen pressure during reactive e-beam evaporation, the stoichiometry of vanadium dioxide thin film was changed. The oxygen pressure of 5 10 -5 Torr was found to be an optimum pressure to fabricate perfect stoichiometric VO 2 thin film. Any deviation from perfect stoichiometry tended...
Stoichiometric VO 2 thin films were fabricated on glass substrates by reactive electron-beam evaporation under controlled oxygen pressures. Rapid thermal annealing (RTA) was examined as a promising annealing method to crystallize the as-deposited thin film. An RTA temperature of 400 o C and time of 20-30 s were found to be optimum annealing conditions to crystallize the thin films,...
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