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The high current density induced failure in Ge2Sb2Te5(GST)-based phase change memory (PCM) is investigated. A strong dependence of cycling endurance on the polarity of the operation current is observed and reported for the first time. The cycling endurance is reduced by 4 orders of magnitude when the current polarity is reversed. Careful TEM analysis of failed cells revealed a thin void in GST over...
A method based on Frenkel-Poole emission is proposed to model the I-V data of the amorphous state (high resistance state) in mushroom-type phase-change memory (PCM) devices. We found the I-V characteristics in the high resistance state are dominated by (i) the size of the amorphous GST (aGST) volume and (ii) the trap density of the amorphized GST material. Neither (i) nor (ii) can't be resolved by...
We demonstrate poly-silicon emitter vertical PNP bipolar junction transistors (BJTs) that could be used as access devices for phase change memory. The device arrays fabricated using a 180 nm BiCMOS process exhibit current drive capability in excess of 10 mA/mum2, on-off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to...
We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance(Rd) and the amplitude of the programming current.
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