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The first measurements of dynamic spectra of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation are reported. A spectral broadening factor ? was determined from the relative sideband strength to the carrier, and it decreased with increasing operating electric field in the modulator. The estimated ?-value for full modulation was |?| = 2.3, which can be reduced...
Low-voltage driving and high-speed modulations of InGaAsP/InP electroabsorption modulators with strip-loaded planar waveguide have been described. The modulators were fabricated from VPE-grown InGaAsP/InP double-heterostructure wafers. For ?=1.55 ?m incident light an extinction ratio of 20 dB was achieved with an applied voltage of ~?6 V. The insertion loss was 9.6 dB. The calibrated 3 dB bandwidth...
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