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Hall coefficient, electrical conductivity, and electron mobility are investigated for n‐ZnSe:Yb single crystals with high concentration of electrically active background impurities ((cm) in the temperature range from 4.2 to 300 K. It is found that increasing concentration of Yb impurity in Zn + Yb melt from 0.03 to 4.00 at.% decreases the concentration of shallow and deep ...
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