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Understanding the properties that determine the distribution and behavior of trace impurities in Si wafers is critical to defining and controlling the performance, reliability, and yields of integrated microelectronic devices. It remains, however, an intrinsically difficult task to determine trace impurities in Si because of the minute concentrations and extremely high levels of matrix involved. In...
A method has been developed based on an on-line isotope dilution technique couple with laser ablation/inductively coupled plasma mass spectrometry (LA–ICP-MS), for the determination of boron in p-type silicon wafers. The laser-ablated sample aerosol was mixed on-line with an enriched boron aerosol supplied continuously using a conventional nebulization system. Upon mixing the two aerosol streams,...
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