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The surface defect and carrier concentrations of Nb‐doped SrTiO3 (NSTO) single crystals play an important role in its resistance switching (RS) properties. Herein, the RS of both 0.05 and 0.7 wt% Nb‐doped NSTO single crystals are studied. The hole defects on NSTO, which are characterized by electron paramagnetic resonance, increase with the enhanced Nb‐doping level. The hole defects with positive...
We successfully grew Gallium nitride (GaN) films on MgAl2O4 (111) substrates using low temperature pulsed laser deposition (PLD). X‐ray diffraction rocking curves revealed the high quality of as‐grown GaN with its full width at half maximum (FWHM) along [0002] as small as 0.08°. Atomic force microscopy images showed very smooth surface of as‐grown GaN and indicated a two‐dimensional growth. High‐resolution...
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